The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2026

Filed:

Sep. 28, 2023
Applicant:

Winbond Electronics Corp., Taichung City, TW;

Inventors:

Yu-PO Wang, Kaohsiung City, TW;

Te-Hsuan Peng, Taichung City, TW;

Assignee:

WINBOND ELECTRONICS CORP., Taichung City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H01L 21/76802 (2013.01); H01L 21/0274 (2013.01); H01L 21/0332 (2013.01); H10D 84/0147 (2025.01); H10D 84/038 (2025.01);
Abstract

A method for forming semiconductor structures is provided. The method includes forming a first patterning photoresist layer having a first opening on a first patterning layer, trimming the first patterning photoresist layer, transferring the first pattern of the trimmed first patterning photoresist layer to the first patterning layer, performing a first pattern reversal process to reverse the first pattern of the first patterning layer into the second opening, forming a second patterning layer in and on the second opening, forming a second patterning photoresist layer having a third opening on the second patterning layer, transferring the second pattern of the second patterning photoresist layer to a first stacking layer, performing a second pattern reversal process to reverse a third pattern between the second opening and the third opening into a fourth opening, and extending the fourth opening to the substrate.


Find Patent Forward Citations

Wang, Yu-PO. (2026). Method for forming semiconductor structures (U.S. Patent No. 12616010). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12616010

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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