The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2026

Filed:

Jul. 27, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Doory Kim, Seoul, KR;

Jae Hwang Jung, Suwon-si, KR;

Wook Rae Kim, Suwon-si, KR;

Nam Yoon Kim, Seoul, KR;

Myung Jun Lee, Seongnam-si, KR;

Seokran Go, Seoul, KR;

Dokyung Jeong, Gyeongju-si, KR;

Uidon Jeong, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); G01N 21/64 (2006.01); G01N 21/95 (2006.01); G01N 21/956 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); G01N 21/643 (2013.01); G01N 21/9501 (2013.01); G01N 21/956 (2013.01); G01N 2021/6439 (2013.01);
Abstract

A method for fabricating a semiconductor device is provided. The method for fabricating the semiconductor device includes forming a semiconductor pattern including a first layer and a second layer on a substrate, forming a coating layer on a surface of the first layer, forming a dyeing substance in which one of an antibody or a protein is combined with a fluorophore, attaching the dyeing substance to a surface of the coating layer to form a dyeing layer, and photographing the fluorophore with an ultra-high resolution microscope to detect the semiconductor pattern.


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