The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2026
Filed:
May. 10, 2024
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
The present disclosure provides a method for improving residue formation after mandrel removal, including steps of: providing a TEOS layer, forming mandrel structures spaced apart from each other on the TEOS layer, and forming spacers on sidewalls of each of the mandrel structures; forming a first SOC layer to cover the surface of the TEOS layer, the mandrel structures, and the spacers of the mandrel structures, and forming a SOC structure that covers the spacers and exposes the top surfaces of the mandrel structures; removing the mandrel structures by etch along sidewalls of SOC structure, forming a first groove between two of the spacers on the sidewalls of the removed mandrel structures; forming a second SOC layer to cover the SOC structure and fill the first groove; performing top planarization of the second SOC layer until the top surface of the SOC structure is exposed.