logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12615819 B1

PDFFull Text
Date of Patent:
Apr. 28, 2026

Filed:

Aug. 29, 2023

Space confined epi for stacked fet

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Tsung-Sheng Kang, Ballston Lake, NY (US);

Tao Li, Slingerlands, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Nicolas Jean Loubet, Guilderland, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorney:

Samuel A. Waldbaum

Primary Examiner:

Tong-Ho Kim

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 23/48 (2006.01); H01L 27/092 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/775 (2006.01); H01L 29/786 (2006.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 84/85 (2025.01); H10W 20/20 (2026.01);
U.S. Cl.
CPC ...
H10D 62/121 (2025.01); H10D 30/43 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/151 (2025.01); H10D 84/85 (2025.01); H10W 20/20 (2026.01);
Abstract

A microelectronic structure that includes a stacked nanosheet FET transistor that includes an upper nanosheet transistor and a lower nanosheet transistor. The upper nanosheet transistor includes an upper source/drain and the upper source/drain includes an upper tip that is pointed in a first direction. The lower nanosheet transistor includes a lower source/drain and the lower source/drain includes a lower tip pointed in a second direction. The first direction is different than the second direction.

Find Patent Forward Citations

Loading…