The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2026
Filed:
Feb. 16, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Shahaji B. More, Hsinchu City, TW;
Cheng-Han Lee, New Taipei City, TW;
Shih-Chieh Chang, Taipei City, TW;
Wan-Hsuan Hsieh, Hsinchu City, TW;
Yi-Chun Liu, Taichung City, TW;
Chee-Wee Liu, Taipei City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
The present disclosure provides a semiconductor structure and a method of forming the same. A semiconductor structure according to the present disclosure includes a plurality of nanostructures disposed over a substrate, a plurality of inner spacer features interleaving the plurality of nanostructures. The plurality of nanostructures are arranged along a direction perpendicular to the substrate. The plurality of inner spacer features include a bottommost inner spacer feature and upper inner spacer features disposed above the bottommost inner spacer feature. The first height of the bottommost inner spacer feature along the direction is greater than a second height of each of the upper inner spacer features.