The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
Jun. 28, 2023
Tokyo Electron Limited, Tokyo, JP;
Jason Marion, Albany, NY (US);
Indroneil Roy, Albany, NY (US);
Yusuke Yoshida, Albany, NY (US);
Yun Han, Albany, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method includes providing a semiconductor substrate and forming a dielectric layer over the semiconductor substrate. The method includes forming a metal layer over the dielectric layer. The method includes forming a patterned mask over the metal layer. The method includes performing a first etching process using a first etchant to form metal patterns separated by trenches in the metal layer. The method further includes performing a second etching process using a second etchant and a passivant to extend the trenches in the dielectric layer, resulting in a passivation layer formed along sidewalls of the metal patterns.