The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2026

Filed:

Dec. 16, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Carl Radens, LaGrangeville, NY (US);

Juntao Li, Cohoes, NY (US);

Kangguo Cheng, Schenectady, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/20 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/231 (2023.02); H10N 70/021 (2023.02); H10N 70/063 (2023.02); H10N 70/823 (2023.02); H10N 70/8828 (2023.02);
Abstract

A phase change bridge memory cell includes: a first interlevel dielectric layer; a first electrode and a second electrode disposed in the first interlevel dielectric layer and separated by a portion of the first interlevel dielectric layer; an interlevel dielectric pillar on the portion of the first interlevel dielectric layer; a first phase change material on the interlevel dielectric pillar; and a second phase change material including two areas on opposite sides of the interlevel dielectric pillar and electrically connected by the first phase change material, wherein the second phase change material is connected to the first electrode and the second electrode.


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