The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2026
Filed:
Aug. 31, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Cheng-Hsien Chen, Tainan City, TW;
Yung-Hsiang Chen, Tainan City, TW;
Chia Hao Li, Tainan City, TW;
Yu-Lung Yeh, Kaohsiung City, TW;
Yen-Hsiu Chen, Tainan City, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
One or more semiconductor processing tools may deposit a contact etch stop layer on a substrate. In some implementations, the contact etch stop layer is comprised of less than approximately 12 percent hydrogen. Depositing the contact etch stop layer may include depositing contact etch stop layer material at a temperature of greater than approximately 600 degrees Celsius, at a pressure of greater than approximately 150 torr, and/or with a ratio of at least approximately 70:1 of NH3 and SiH4, among other examples. The one or more semiconductor processing tools may deposit a silicon-based layer above the contact etch stop layer. The one or more semiconductor processing tools may perform an etching operation into the silicon-based layer until reaching the contact etch stop layer to form a trench isolation structure.