The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2026

Filed:

May. 15, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Ta-Chun Lin, Hsinchu, TW;

Ming-Heng Tsai, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/83 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 84/8311 (2025.01); H10D 84/0128 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01);
Abstract

Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes first nanostructures formed over a substrate along a first direction, and second nanostructures formed over the substrate along the first direction. The semiconductor structure includes a first gate structure formed over the first nanostructures and the second nanostructures along a second direction. Each of the first nanostructures has a first width along the second direction, each of the second nanostructures has a second width along the second direction, and the first width is smaller than the second width. The semiconductor structure includes a first base fin structure below the first nanostructures, and the first base fin structure has a first base width. The first base width is greater than the first width.


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