The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2026
Filed:
Sep. 09, 2022
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Ruilong Xie, Niskayuna, NY (US);
Julien Frougier, Albany, NY (US);
Min Gyu Sung, Latham, NY (US);
Heng Wu, Santa Clara, CA (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 64/23 (2025.01); H01L 23/522 (2006.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 84/83 (2025.01); H10W 20/42 (2026.01);
U.S. Cl.
CPC ...
H10D 64/258 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 84/83 (2025.01); H10W 20/42 (2026.01);
Abstract
A semiconductor structure includes a first source/drain contact disposed between a first gate structure and a second gate structure, a dielectric cap disposed on the first source/drain contact, and a first gate contact disposed over the dielectric cap. The first gate contact connects the first gate structure with the second gate structure.