The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2026
Filed:
Jul. 26, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chia-Hao Chang, Hsinchu City, TW;
Lin-Yu Huang, Hsinchu, TW;
Han-Jong Chia, Hsinchu City, TW;
Bo-Feng Young, Taipei, TW;
Yu-Ming Lin, Hsinchu City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A device includes a substrate, gate stacks, source/drain (S/D) features over the substrate, S/D contacts over the S/D features, and one or more dielectric layers over the gate stacks and the S/D contacts. A via structure penetrates the one or more dielectric layers and electrically contacts one of the gate stacks and the S/D contacts. And a ferroelectric (FE) stack is over the via structure and directly contacting the via structure, wherein the FE stack includes an FE feature and a top electrode over the FE feature.