Memory and reading, writing and erasing methods thereof

Abstract

A memory and reading, writing and erasing methods thereof. The memory includes: H memory planes arranged in parallel along a first direction, where each memory plane extends in a second direction, and includes M columns of memory strings; each column of memory string extends in a third direction; the first direction, the second direction and the third direction are all different, and H and M are integers greater than zero; each column of memory string includes N rows of memristive memory cells. The memory is also provided with word lines, gating transistors, gating lines, bit lines and a common source line, where memristive memory cells in last rows of all memory strings are connected to the common source line, and the common source line is connected to a reference potential through a reference resistor. Use performance of the memory can be improved.