The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2026

Filed:

Sep. 22, 2022
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Saravanan Sethuraman, Portland, OR (US);

Tonia M. Rose, Wendell, NC (US);

George Vergis, Portland, OR (US);

John V. Lovelace, Driftwood, TX (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/10 (2006.01); G11C 7/22 (2006.01); G11C 11/4063 (2006.01);
U.S. Cl.
CPC ...
G11C 7/1084 (2013.01); G11C 7/222 (2013.01); G11C 11/4063 (2013.01);
Abstract

System boot time is decreased by performing Memory Receive enable (MRE) training and MDQ-MDQS Read Delay (MRD) training on a buffered Dual In-Line Memory Module (DIMM). MRE training configures the time at which a data buffer on the buffered DIMM enables its receivers to capture data read from DRAM integrated circuits on a MDQ/MDQS bus between the DRAM and the data buffer on the DIMM. After the MRE training has completed, the data buffer is configured to enable the data buffer receivers to receive data on the MDQ bus on the buffered DIMM during the preamble of the incoming MDQS burst from a read transaction in the DRAM. MRD training tunes the relationship between the MDQ/MDQS bus to ensure sufficient setup and hold eye margins for MDQ so that the data buffer optimally samples the data driven by the DRAM during reads of the DRAM.


Find Patent Forward Citations

Loading…