The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2026
Filed:
Jul. 26, 2024
Lam Research Corporation, Fremont, CA (US);
Da Li, Newark, CA (US);
Ji Yeon Kim, Sunnyvale, CA (US);
Younghee Lee, Pleasanton, CA (US);
Hongxiang Zhao, San Jose, CA (US);
Yisi Zhu, Fremont, CA (US);
Samantha S.H. Tan, Newark, CA (US);
Mengnan Zou, Santa Clara, CA (US);
Zhiwei Sun, Pleasanton, CA (US);
Jun Xue, Fremont, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Process condition management facilitates the combination of dry development and post-development treatment into a single process chamber, eliminating the necessity for a post-dry development bake step in a separate chamber during semiconductor manufacturing. Thermal dry development and plasma dry development may be performed in the same chamber. Thermal dry development, plasma dry development and passivation such as an Oflash treatment; or thermal dry development, plasma dry development, passivation and hardening operations are enabled without wafer transfer.