The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2026

Filed:

Mar. 18, 2022
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Nitin A. Deshpande, Chandler, AZ (US);

Omkar G. Karhade, Chandler, AZ (US);

Mohit Bhatia, Chandler, AZ (US);

Debendra Mallik, Chandler, AZ (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2023.01); H01L 21/56 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 23/498 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 21/565 (2013.01); H01L 21/76898 (2013.01); H01L 23/3128 (2013.01); H01L 23/481 (2013.01); H01L 23/49816 (2013.01); H01L 23/49827 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 25/50 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/32225 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01);
Abstract

A microelectronic component and a method of forming same. The microelectronic component includes: a first substrate having first through vias therein, the first substrate including silicon or glass; a first layer on a front surface of the first substrate and including one or more first dies coupled to the first through vias; a second substrate on a front surface of first layer and having second through vias therein and including silicon or glass; a second layer on a front surface of the second substrate, the first layer between the first substrate and the second substrate, the second layer including one or more second dies coupled to the second through vias; and electrically conductive structures on a back surface of the first substrate coupled to the first through vias.


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