The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2026
Filed:
Sep. 01, 2023
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Jason Marion, Albany, NY (US);
Alexander Kaiser, Albany, NY (US);
Yusuke Yoshida, Albany, NY (US);
Yun Han, Albany, NY (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01L 21/3205 (2006.01); H01L 21/321 (2006.01); H10D 30/01 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H01L 21/32139 (2013.01); H01L 21/32055 (2013.01); H01L 21/3211 (2013.01); H10D 30/024 (2025.01); H10D 64/01 (2025.01);
Abstract
A method includes providing a semiconductor substrate and forming a fin protruding from the semiconductor substrate. The method includes forming a silicon-containing layer over the fin. The method further includes patterning the silicon-containing layer to form a gate structure over the fin, where patterning the silicon-containing layer is implemented using an etchant and a passivant that includes a silicon-containing gas and a nitrogen-containing gas.