The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2026
Filed:
Feb. 18, 2022
Lam Research Corporation, Fremont, CA (US);
Lawrence Schloss, Palo Alto, CA (US);
Joshua Collins, Sebastopol, CA (US);
Griffin John Kennedy, Livermore, CA (US);
Hanna Bamnolker, Cupertino, CA (US);
Sang-Hyeob Lee, Fremont, CA (US);
Patrick Van Cleemput, Duvall, WA (US);
Sanjay Gopinath, Fremont, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Provided herein are low resistance metallization stack structures for 3D-NAND applications and related methods of fabrication. In some embodiments, thin metal oxynitride nucleation layers are deposited on dielectric material followed by deposition of a pure metal conductor using process conditions that increase non-molybdenum component element content at the oxynitride-dielectric interface. Certain embodiments of the methods described below convert less than all of the metal oxynitride nucleation layer to a pure metal layer, further lowering the resistivity.