The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2026
Filed:
Apr. 25, 2023
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Yi-Yeh Chuang, Changhua County, TW;
Zih-Song Wang, Nantou County, TW;
Li-Ta Chen, New Taipei City, TW;
Shun-Yu Gao, Hsinchu City, TW;
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Abstract
A double patterning method of manufacturing select gates and word lines is provided in the present invention, including forming first string patterns composed of word line patterns and select gate patterns on a target layer, forming a conformal spacer layer on first string patterns, wherein the spacer layer forms trenches between first string patterns, forming a fill layer filling up the trenches on the spacer layer, removing fill layer outside of the trenches, so that fill layer in the trenches forms second string patterns, wherein the second string patterns and the first string patterns are spaced apart, removing exposed spacer layer, so that the first string patterns and the second string patterns constitute target patterns spaced apart from each other on the target layer, and performing an etching process using those target patterns as a mask to remove exposed target layer, so as to form word lines and select gates.