The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2026
Filed:
Dec. 01, 2022
Tokyo Electron Limited, Tokyo, JP;
H. Jim Fulford, Marianna, FL (US);
Mark I. Gardner, Cedar Creek, TX (US);
Partha Mukhopadhyay, Oviedo, FL (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A semiconductor device includes a stack of dynamic random access memory (DRAM) cell units over a substrate in a vertical direction perpendicular to a working surface of the substrate. At least one DRAM cell unit includes a transistor and a capacitor. The capacitor includes a first metal layer, a capacitor dielectric layer positioned on the first metal layer, and a second metal layer positioned on the capacitor dielectric layer. The capacitor is elongated in a horizontal direction parallel to the working surface of the substrate. The second metal layer has a first end and a second end in the horizontal direction. The transistor includes a channel structure, and a gate structure disposed all around the channel structure. The first metal layer extends in the horizontal direction beyond the first end of the second metal layer to form a drain region and a source region of the transistor.