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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12595276 B1

PDFFull Text
Date of Patent:
Apr. 07, 2026

Filed:

Dec. 22, 2021

Mid-valent molybdenum complexes for thin film deposition

Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Charles Cameron Mokhtarzadeh, Portland, OR (US);

Scott B. Clendenning, Portland, OR (US);

Matthew V. Metz, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:

Akona IP PC

Primary Examiner:

William B Partridge

Assistant Examiner:

Alexandre X Ramirez

Int. Cl.
CPC ...
H10D 30/67 (2025.01); C07F 11/00 (2006.01); C07F 17/00 (2006.01); C23C 16/18 (2006.01); C23C 16/455 (2006.01); H01L 21/285 (2006.01); H01L 21/443 (2006.01); H10D 62/83 (2025.01); H10D 62/85 (2025.01); H10D 64/62 (2025.01); H10D 64/66 (2025.01); H10D 84/83 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
C07F 11/005 (2013.01); C07F 17/00 (2013.01); C23C 16/18 (2013.01); C23C 16/45553 (2013.01); H10D 30/6739 (2025.01); H10D 62/83 (2025.01); H10D 62/85 (2025.01); H10D 64/62 (2025.01); H10D 64/667 (2025.01); H01L 21/28568 (2013.01); H01L 21/28575 (2013.01); H01L 21/443 (2013.01); H10D 30/67 (2025.01); H10D 84/834 (2025.01); H10D 84/851 (2025.01);
Abstract

Described herein are IC devices that include molybdenum or a molybdenum compound, such as compounds including oxygen or nitrogen. The molybdenum may be deposited at a high concentration, e.g., at least 50% atomic density. Also described herein are mid-valent molybdenum precursors for depositing molybdenum, and reactions for producing the mid-valent molybdenum precursors. For example, the molybdenum precursors may be generated by reacting a higher-valent molybdenum compound with an amidinate or a formamidinate.

Find Patent Forward Citations

Mokhtarzadeh, Charles. (2026). Mid-valent molybdenum complexes for thin film deposition (U.S. Patent No. 12595276). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12595276

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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