The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2026
Filed:
Dec. 07, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Taeyeong Kim, Yongin-si, KR;
Taeseong Kim, Suwon-si, KR;
Kwangjin Moon, Hwaseong-si, KR;
Hyungjun Jeon, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A semiconductor device including a first structure including a first dielectric layer and a first conductive pattern in the first dielectric layer, the first conductive pattern including a first conductive material and a first bonding enhancement material; a second structure including a second dielectric layer and a second conductive pattern in the second dielectric layer, the second dielectric layer directly contacting the first dielectric layer, the second conductive pattern directly contacting the first conductive pattern; and a first bonding enhancement layer between the first conductive pattern and the second dielectric layer, wherein the first bonding enhancement layer includes the first bonding enhancement material or a material of the second dielectric layer, and the first bonding enhancement material includes a material having a higher bonding force to the material of the second dielectric layer than a bonding force of the first conductive material to the material of the second dielectric layer.