The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

Mar. 23, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Myungsam Kang, Hwaseong-si, KR;

Jeongseok Kim, Cheonan-si, KR;

Bongju Cho, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/34 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 25/16 (2023.01);
U.S. Cl.
CPC ...
H01L 23/34 (2013.01); H01L 23/3114 (2013.01); H01L 23/49811 (2013.01); H01L 23/49822 (2013.01); H01L 23/49827 (2013.01); H01L 24/06 (2013.01); H01L 24/13 (2013.01); H01L 25/16 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/13147 (2013.01);
Abstract

A semiconductor package includes a first rewiring layer; a lower semiconductor chip on the first rewiring layer; an upper semiconductor chip on the lower semiconductor chip; a heat dissipation structure on the upper semiconductor chip; a molding layer on the first rewiring layer so as to contact side surfaces of the lower semiconductor chip, the upper semiconductor chip, and the heat dissipation structure; a second rewiring layer on the heat dissipation structure; and one or more connection structures on the first rewiring layer and positioned adjacent to the side surfaces of the lower semiconductor chip and the upper semiconductor chip and configured to extend through the molding layer and connect the first rewiring layer to the second rewiring layer, wherein the upper semiconductor chip and the heat dissipation structure contact each other.


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