The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2026
Filed:
Oct. 16, 2023
United Microelectronics Corp., Hsinchu, TW;
Kun-Ju Li, Tainan, TW;
Hsin-Jung Liu, Pingtung County, TW;
Jhih Yuan Chen, Kaohsiung, TW;
I-Ming Lai, Kaohsiung, TW;
Ang Chan, Taipei, TW;
Wei Xin Gao, Tainan, TW;
Hsiang Chi Chien, Pingtung County, TW;
Hao-Che Hsu, Tainan, TW;
Chau Chung Hou, Tainan, TW;
Zong Sian Wu, Tainan, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A manufacturing method of a semiconductor structure includes the following steps. A first wafer is provided. The first wafer includes a first substrate and a first device layer. A second wafer is provided. The second wafer includes a second substrate and a second device layer. The second device layer is bonded to the first device layer. An edge trimming process is performed on the first wafer and the second wafer to expose a first upper surface of the first substrate and a second upper surface of the first substrate and to form a damaged region in the first substrate below the first upper surface and the second upper surface. The second upper surface is higher than the first upper surface. A first photoresist layer is formed. The first photoresist layer is located on the second wafer and the second upper surface and exposes the first upper surface and the damaged region. The damaged region is removed by using the first photoresist layer as a mask. The first photoresist layer is removed.