The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2026
Filed:
Oct. 17, 2022
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Toshiki Kanaki, Albany, NY (US);
Subhadeep Kal, Albany, NY (US);
Aelan Mosden, Albany, NY (US);
Ivo Otto, IV, Albany, NY (US);
Masashi Matsumoto, Hillsboro, OR (US);
Shinji Irie, Nirasaki, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30621 (2013.01); H01L 21/0245 (2013.01); H01L 21/02472 (2013.01);
Abstract
Methods for selective etching of one layer or material relative to another layer or material adjacent thereto. In an example, a SiGe layer is etched relative to or selective to another silicon containing layer which either contains no germanium or geranium in an amount less than that of the target layer.