The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2026
Filed:
Aug. 15, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Su-Chun Yang, Hsinchu County, TW;
Jui Hsuan Tsai, Taipei City, TW;
Jih-Churng Twu, Hsinchu County, TW;
Chung-Shi Liu, Hsinchu City, TW;
Chen-Hua Yu, Hsinchu City, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method of a semiconductor-on-insulator structure includes the following steps. A semiconductor donor substrate is provided. A first implantation process is performed to form an exfoliation layer of the semiconductor donor substrate with a first ion concentration. A second implantation process is performed on a perimeter region of the exfoliation layer to form a high concentration region of the exfoliation layer with a second ion concentration higher than the first ion concentration. The semiconductor donor substrate is bonded to a semiconductor handle substrate, so that the exfoliation layer with the high concentration region is bonded to the semiconductor handle substrate. An annealing process is performed to separate the exfoliation layer from the rest of the semiconductor donor substrate.