The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

Feb. 13, 2024
Applicant:

Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;

Inventor:

Ying Yan, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/16 (2006.01); G11C 17/18 (2006.01); H03K 19/20 (2006.01);
U.S. Cl.
CPC ...
G11C 17/16 (2013.01); G11C 17/18 (2013.01); H03K 19/20 (2013.01);
Abstract

The present invention discloses an efuse unit, including a first fuse, a second fuse, a first NMOS, a second NMOS and a third NMOS. One end of the first fuse serves as a Q1 port, and the other end is connected to drain end of the third NMOS and the first NMOS. One end of the second fuse serves as a Q2 port and is short-circuited to a source end of the third NMOS, and the other end is connected to a drain end of the second NMOS. Agate end of the third NMOS serves as an RDWL port. A gate end of the first NMONS serves as a WLC port. A gate end of the second NMOS serves as a WL port. The present invention can improve the correctness of the reading operation, reduce the voltage required for the programming operation, reduce the programming current.


Find Patent Forward Citations

Yan, Ying. (2026). Efuse unit and application circuit thereof (U.S. Patent No. 12592292). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12592292

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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