The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

Aug. 29, 2023
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Tomoko Ogura Iwasaki, San Jose, CA (US);

Hong-Yan Chen, San Jose, CA (US);

Pamela Castalino, Boise, ID (US);

Priya Vemparala Guruswamy, Boise, ID (US);

Jun Xu, San Jose, CA (US);

Gianluca Nicosia, Boise, ID (US);

Ji-Hye Gale Shin, Palo Alto, CA;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/12 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3459 (2013.01); G11C 16/0433 (2013.01); G11C 16/102 (2013.01); G11C 16/12 (2013.01);
Abstract

A memory device includes an array of memory cells and a controller configured to access the array of memory cells to program a selected memory cell of the array of memory cells to a target level based on a compensation value of a program command. The controller is further configured to sense a threshold voltage of the selected memory cell. The controller is further configured to in response to the compensation value having a first value and the threshold voltage being greater than a first program verify level, inhibit programming of the selected memory cell. The controller is further configured to in response to the compensation value having a second value different from the first value and the threshold voltage being greater than a second program verify level less than the first program verify level, inhibit programming of the selected memory cell.


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