The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2026

Filed:

Jul. 24, 2023
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Prayudi Lianto, Singapore, SG;

Marvin Louis Bernt, Whitefish, MT (US);

Tapash Chakraborty, Dombivali, IN;

Yin Wei Lim, Singapore, SG;

Jing Xu, Kalispell, MT (US);

Assignee:

Applied Materials Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/80 (2013.01); H01L 24/08 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03466 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/03622 (2013.01); H01L 2224/03845 (2013.01); H01L 2224/05011 (2013.01); H01L 2224/05018 (2013.01); H01L 2224/05026 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05186 (2013.01); H01L 2224/0519 (2013.01); H01L 2224/05546 (2013.01); H01L 2224/05571 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/0812 (2013.01); H01L 2224/80357 (2013.01); H01L 2224/80896 (2013.01); H01L 2924/04953 (2013.01); H01L 2924/0504 (2013.01); H01L 2924/05442 (2013.01); H01L 2924/059 (2013.01); H01L 2924/062 (2013.01); H01L 2924/07025 (2013.01); H01L 2924/20106 (2013.01); H01L 2924/20107 (2013.01);
Abstract

A method for depositing copper onto a substrate includes grain engineering to control the internal structure of the copper. In some embodiments, the method comprises depositing a grain control layer conformally onto a copper seed layer in a structure on the substrate where the grain control layer is a non-conducting material, etching the grain control layer using a direct deep reactive ion etch (DRIE) process to remove portions of the grain control layer on horizontal surfaces within the structure, and depositing a copper material onto the structure such that at least one grain parameter of the copper material is controlled, at least in part, by a remaining portion of the grain control layer on vertical surfaces of the structure. In some embodiments, the deposited copper material in the structure has a <grain orientation normal to a horizontal surface of the structure.


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