The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2026

Filed:

Feb. 13, 2023
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Rohit Kothari, Boise, ID (US);

Harsh Narendrakumar Jain, Boise, ID (US);

John D. Hopkins, Meridian, ID (US);

Xiaosong Zhang, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); G03F 9/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); G03F 9/7073 (2013.01); G03F 9/7076 (2013.01); G03F 9/708 (2013.01); G03F 9/7084 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/5446 (2013.01);
Abstract

An electronic device comprising a multideck structure including a base stack of materials and one or more stacks of materials on the base stack of materials, at least one high aspect ratio feature in an array region in the base stack of materials and in the one or more stacks of materials, and overlay marks including an optical contrast material in or on only an upper portion of the base stack of materials in an overlay mark region of the electronic device is disclosed. The overlay mark region is laterally adjacent to the array region and the overlay marks are adjacent to at least one additional high aspect ratio feature in the base stack of materials. Additional electronic devices and memory devices are disclosed.


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