Generation of physically unclonable function using one-time-programmable memory devices with backside interconnect structures

Abstract

A semiconductor device includes a memory cell randomly presenting a first logic state or a second logic state and formed on a first side of a substrate, and a first and a second bit lines formed on a second side of the substrate opposite to the first side. The memory cell includes: a programming transistor having a first and a second source/drain terminals; a first reading transistor having a first source/drain terminal coupled to the first source/drain terminal of the programming transistor; and a second reading transistor having a first source/drain terminal coupled to the second source/drain terminal of the programming transistor. The first bit line is operatively coupled to a second source/drain terminal of the first reading transistor, and the second bit line is operatively coupled to a second source/drain terminal of the second reading transistor.