The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
Nov. 13, 2022
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Vibhor Jain, Williston, VT (US);
Crystal R. Kenney, Waterford, NY (US);
John J. Pekarik, Underhill, VT (US);
Assignee:
GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H10D 86/00 (2025.01); H01L 21/762 (2006.01); H01L 23/66 (2006.01); H10D 86/01 (2025.01);
U.S. Cl.
CPC ...
H10D 86/201 (2025.01); H01L 21/76267 (2013.01); H01L 21/76283 (2013.01); H01L 23/66 (2013.01); H10D 86/01 (2025.01); H01L 2223/6672 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a substrate with trap rich and low resistivity regions and methods of manufacture. The structure includes: a high resistivity semiconductor substrate; an active device over the high resistivity semiconductor substrate; and a low resistivity region floating in the high resistivity semiconductor substrate and which is below the active device.