The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2026

Filed:

Sep. 19, 2023
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Tsung-Sheng Kang, Ballston Lake, NY (US);

Tao Li, Slingerlands, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Nicolas Jean Loubet, Guilderland, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/23 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 64/256 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 84/017 (2025.01); H10D 84/038 (2025.01); H10D 84/85 (2025.01);
Abstract

A microelectronic structure includes a first nanosheet transistor that includes a first source/drain and a second source/drain. The first source/drain and the second source/drain are doped with a first material. A second nanosheet transistor that includes a third source/drain and fourth source/drain. The third source/drain and the fourth source/drain are doped with a second material. The first material and the second material are different. A placeholder is located on a backside surface of the second source/drain and the placeholder is doped with a third material. The third material is the same as the first material.


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