The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2026

Filed:

Aug. 02, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Benjamin Colombeau, San Jose, CA (US);

Saurabh Chopra, Saratoga, CA (US);

Myungsun Kim, Pleasanton, CA (US);

Balasubramanian Pranatharthiharan, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6748 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01);
Abstract

Semiconductor devices and methods of manufacturing the same are described. The method includes forming a bottom dielectric isolation (BDI) layer on a substrate and depositing a template material in the source/drain trench. The template material is crystallized. Epitaxially growth of the source and drain regions then proceeds, which growth advantageously occurring on the bottom and sidewalls of the source and drain regions.


Find Patent Forward Citations

Quick Actions:

Colombeau, Benjamin. (2026). Template for nanosheet source drain formation with bottom dielectric (U.S. Patent No. 12588248). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12588248

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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