The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2026

Filed:

Feb. 16, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yi-He Tsai, Hsinchu, TW;

Yi-Hung Chang, Hsinchu, TW;

Lung Chen, Hsinchu, TW;

Long-Jie Hong, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/00 (2025.01); H01L 23/528 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 30/024 (2025.01); H01L 23/5283 (2013.01); H10D 30/6211 (2025.01); H10D 64/017 (2025.01); H10D 64/021 (2025.01); H10D 84/013 (2025.01); H10D 84/0147 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01);
Abstract

A semiconductor device includes a semiconductor channel. The semiconductor device includes a metal gate structure disposed over the semiconductor channel. The semiconductor device includes a gate electrode having a bottom surface contacting an upper surface of the metal gate structure. The gate electrode has its side portions extending from its top surface toward the semiconductor fin with a first depth and a central portion extending from its top surface toward the semiconductor fin with a second depth, the first depth being substantially greater than the second depth.


Find Patent Forward Citations

Tsai, Yi-He. (2026). Silicon layer-based silicide contacts (U.S. Patent No. 12588230). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12588230

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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