The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2026

Filed:

Aug. 23, 2021
Applicant:

Hitachi High-tech Corporation, Tokyo, JP;

Inventors:

Isao Mori, Tokyo, JP;

Ryosuke Ochiai, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32174 (2013.01); H01J 37/32128 (2013.01); H01J 37/32715 (2013.01); H01J 2237/2007 (2013.01); H01J 2237/327 (2013.01); H01L 21/67069 (2013.01);
Abstract

A high-precision plasma processing apparatus configured with: a processing chamber in which a sample undergoes plasma processing; a first radio frequency power supply that supplies radio frequency power for plasma generation; a sample stage on which a sample is loaded; a second radio frequency power supply that supplies radio frequency power to the sample stage; a power supply that applies voltage to the sample stage; and a control unit that controls the power supply. In the plasma processing apparatus, a cycle of a waveform of the voltage has a positive ramp period during which the voltage rises, a negative ramp period during which the voltage falls, and a removal amount control period during which the amount of charged particles removed from the sample per unit time is controlled.


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