The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2026

Filed:

Nov. 29, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Pokuan Ho, Taipei City, TW;

Chia-Tien Wu, Taichung City, TW;

Cheng-Chi Chuang, New Taipei City, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/76802 (2013.01); H01L 21/76832 (2013.01); H01L 21/76877 (2013.01); H01L 23/53295 (2013.01);
Abstract

A semiconductor structure includes a first conductive member, a second conductive member and a third conductive member. The first conductive member is extended through and is laterally surrounded by a first dielectric layer. The second conductive member is disposed over the first dielectric layer and the first conductive member, and is laterally surrounded by a second dielectric layer. The third conductive member is disposed over the second conductive member, and is laterally surrounded by the second dielectric layer, wherein a portion of the second conductive member is protruded into the third conductive member.


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