The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2026

Filed:

Sep. 24, 2021
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Georg Seidemann, Landshut, DE;

Martin Ostermayr, Woerth, DE;

Walther Lutz, Erding, DE;

Joachim Assenmacher, Unterhaching, DE;

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/495 (2006.01); H01L 23/498 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 23/3128 (2013.01); H01L 23/49579 (2013.01); H01L 23/49816 (2013.01); H01L 23/49833 (2013.01); H01L 23/49866 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 24/16 (2013.01); H01L 24/48 (2013.01); H01L 25/0655 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/08225 (2013.01); H01L 2224/08245 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/48225 (2013.01); H01L 2224/48245 (2013.01); H01L 2224/80001 (2013.01);
Abstract

A semiconductor device is provided. The semiconductor device comprises a semiconductor die comprising a semiconductor substrate and a plurality of transistors arranged at a front side of the semiconductor substrate. Further, the semiconductor die comprises a first electrically conductive structure extending from the front side of the semiconductor substrate to a backside of the semiconductor substrate and a second electrically conductive structure extending from the front side of the semiconductor substrate to the backside of the semiconductor substrate. The semiconductor device further comprises an interposer directly attached to the backside of the semiconductor substrate. The interposer comprises a first trace electrically connected to the first electrically conductive structure of the semiconductor die. Further the interposer comprises the first trace or a second trace electrically connected to the second electrically conductive structure of the semiconductor die.


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