The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2026

Filed:

Mar. 24, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Sungho Jo, Brookline, MA (US);

Rajesh Prasad, Lexington, MA (US);

Kyuha Shim, Andover, MA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3086 (2013.01); H01L 21/02164 (2013.01); H01L 21/02238 (2013.01); H01L 21/02252 (2013.01); H01L 21/26533 (2013.01); H01L 21/3081 (2013.01);
Abstract

Methods of forming a silicon hardmask are disclosed. In one example, a method may include forming a silicon mask over a device layer, forming a carbon mask over the silicon mask, and forming an opening through the carbon mask. The method may further include forming an oxide layer within the opening by performing an ion implantation process to an upper surface of the silicon mask.


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