The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12581864 B1

Date of Patent:

Mar. 17, 2026

Filed:

Mar. 24, 2021

Memory device and fabrication method thereof

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Jun-Yao Chen, Hsinchu, TW;

Sheng-Huang Huang, Hsinchu, TW;

Hung-Cho Wang, Hsinchu, TW;

Harry-Hak-Lay Chuang, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

Seed IP Law Group LLP

Primary Examiner:

Eric K Ashbahian

Int. Cl.

CPC ...

H10N 50/01 (2023.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01);

U.S. Cl.

CPC ...

H10N 50/10 (2023.02); H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02);

Abstract

A memory device includes a bottom electrode, a magnetic tunnel junction (MTJ) stack, a top electrode, and a sidewall spacer. The MTJ stack is over the bottom electrode. The top electrode is over the MTJ stack. The sidewall spacer laterally surrounds the MTJ stack and the top electrode. The sidewall spacer has an outermost sidewall laterally set back from an outermost sidewall of the bottom electrode.

Find Patent Forward Citations

Chen, Jun-Yao. (2026). Memory device and fabrication method thereof (U.S. Patent No. 12581864). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12581864

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile