The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2026
Filed:
Dec. 23, 2020
International Business Machines Corporation, Armonk, NY (US);
Choonghyun Lee, Rensselaer, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Juntao Li, Cohoes, NY (US);
Shogo Mochizuki, Clifton Park, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for manufacturing a semiconductor device includes forming a plurality of fins on a substrate, wherein each fin of the plurality of fins includes silicon germanium. A layer of silicon germanium oxide is deposited on the plurality of fins, and a first thermal annealing process is performed to convert outer regions of the plurality of fins into a plurality of silicon portions. Each silicon portion of the plurality of silicon portions is formed on a silicon germanium core portion. The method further includes forming a plurality of source/drain regions on the substrate, and depositing a layer of germanium oxide on the plurality of source/drain regions. A second thermal annealing process is performed to convert outer regions of the plurality of source/drain regions into a plurality of germanium condensed portions.