The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2026

Filed:

Jan. 31, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventor:

Fu-Chiang Kuo, Hsinchu City, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H10D 1/00 (2025.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H10B 12/033 (2023.02); H10B 12/0387 (2023.02); H10D 1/042 (2025.01); H10D 1/716 (2025.01);
Abstract

The present disclosure provides a method of manufacturing a semiconductor structure. The method includes providing a substrate; forming a trench with a predetermined aspect ratio in the substrate to form two fins, wherein the forming of the trench induces the substrate to warp toward a first direction; forming a metal-insulator-metal (MIM) stack on sidewalls of the two fins in the trench, and leaving a space surrounded by the MIM stack in the trench; determining whether the substrate warps toward a second direction reverse to the first direction after the forming of the MIM stack; and in response to the substrate warping toward the second direction, depositing an insulating layer to cover an upper surface of the MIM stack and seal the trench to thereby leave a void in the space.


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