The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2026
Filed:
Mar. 27, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chieh-Hsin Hsieh, Hsinchu County, TW;
Wei-Han Lai, New Taipei, TW;
Ching-Yu Chang, Yilang County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/039 (2006.01); G03F 7/004 (2006.01); G03F 7/11 (2006.01); G03F 7/16 (2006.01); G03F 7/32 (2006.01); H01L 21/027 (2006.01); H01L 21/308 (2006.01); H10D 30/01 (2025.01);
U.S. Cl.
CPC ...
G03F 7/0392 (2013.01); G03F 7/0048 (2013.01); G03F 7/11 (2013.01); G03F 7/168 (2013.01); G03F 7/322 (2013.01); H01L 21/0274 (2013.01); H01L 21/0276 (2013.01); H01L 21/3081 (2013.01); H10D 30/024 (2025.01);
Abstract
A photoresist includes a solvent, a polymer and an additive. The polymer is dissolved in the solvent, and the additive is dispersed in the solvent. The additive includes a double bond or includes an epoxy group. The additive has a surface tension different from a surface tension of the polymer.
Hsieh, Chieh-Hsin. (2026). Photoresist and method of manufacturing a semiconductor device (U.S. Patent No. 12578641). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12578641
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile