The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
Sep. 13, 2021
Kokusai Electric Corporation, Tokyo, JP;
Keita Ichimura, Toyama, JP;
Masanori Nakayama, Toyama, JP;
Hiroto Igawa, Toyama, JP;
Yuichiro Takeshima, Toyama, JP;
Katsunori Funaki, Toyama, JP;
Hiroki Kishimoto, Toyama, JP;
Yuki Yamakado, Toyama, JP;
Yasutoshi Tsubota, Toyama, JP;
Tatsushi Ueda, Toyama, JP;
Kokusai Electric Corporation, Tokyo, JP;
Abstract
According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: modifying a surface of a substrate into an impurity-containing layer by performing: (a) supplying an impurity-containing gas containing an impurity and a dilution gas into a process chamber in which the substrate is accommodated; (b) plasma-exciting the impurity-containing gas and the dilution gas; and (c) supplying an active species containing the impurity generated by plasma-exciting the impurity-containing gas and the dilution gas to the substrate, wherein a flow rate ratio of the impurity-containing gas to the dilution gas is controlled in (a) such that a partial pressure of the impurity-containing gas in the process chamber is set to a predetermined partial pressure less than a partial pressure at which the impurity-containing gas forms deposits containing a polymer in the process chamber.