The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
Oct. 28, 2022
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Reinaldo Vega, Mahopac, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Shogo Mochizuki, Mechanicville, NY (US);
Julien Frougier, Albany, NY (US);
Ravikumar Ramachandran, Pleasantville, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/775 (2006.01); H01L 29/786 (2006.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 64/018 (2025.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/115 (2025.01); H10D 62/121 (2025.01); H10D 64/015 (2025.01); H10D 64/017 (2025.01); H10D 64/021 (2025.01); H10D 84/0167 (2025.01); H10D 84/0188 (2025.01); H10D 84/038 (2025.01); H10D 84/85 (2025.01);
Abstract
Embodiments of the invention include a transistor comprising a gate region and a source/drain region. A first isolation layer is under the gate region. A second isolation layer is separated from the first isolation layer by a third isolation layer.