The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2026

Filed:

Feb. 22, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Tsung-Han Tsai, Hsinchu, TW;

Ta-Chun Lin, Hsinchu, TW;

Chun-Sheng Liang, Hsinchu, TW;

Chih-Hao Chang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 62/121 (2025.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 84/0128 (2025.01); H10D 84/038 (2025.01);
Abstract

A semiconductor structure includes a first device unit and a second device unit, each of which includes channel features spaced apart from each other, and a dielectric wall disposed between the first and second device units. The dielectric wall includes a first part which includes a plurality of first portions that are in direct contact with the channel features of the first device unit, and a second part which includes a plurality of second portions that are in direct contact with the channel features of the second device unit. At least one of the first and second parts carries positive or negative charges.


Find Patent Forward Citations

Loading…