The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
Feb. 15, 2021
Robert Bosch Gmbh, Stuttgart, DE;
Jens Baringhaus, Sindelfingen, DE;
Daniel Krebs, Aufhausen, DE;
ROBERT BOSCH GMBH, Stuttgart, DE;
Abstract
A MOSFET with saturation contact. The MOSFET with saturation contact includes an n-doped source region, a source contact, a contact structure, which extends from the source contact to the n-doped source region, and forms with the source contact a first conductive connection and forms with the n-doped source region a second conductive connection, a barrier layer and an insulating layer. The contact structure includes a section between the first conductive connection and the second conductive connection, which is embedded between the barrier layer and the dielectric layer and is configured in such a way that a two-dimensional electron gas is formed therein.