The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2026

Filed:

Sep. 08, 2023
Applicant:

Tokyo Electron Limited, Minato-ku, JP;

Inventor:

Soya Todo, Boise, ID (US);

Assignee:

Tokyo Electron Limited, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3244 (2013.01); H01J 37/32165 (2013.01); H01J 37/32174 (2013.01); H01J 37/32568 (2013.01); H01J 2237/334 (2013.01);
Abstract

The present disclosure provides a substrate processing technology with good in-plane uniformity. A plasma processing method according to the present disclosure includes: disposing a substrate on a substrate support, supplying a processing gas, into the chamber, for processing the substrate, forming a plasma of the processing gas between the upper electrode and the lower electrode by supplying a first RF having a first frequency to an upper electrode or a lower electrode, and controlling an electric field formed between the upper electrode or the lower electrode and the plasma by supplying a second RF having a second frequency lower than the first frequency to the upper electrode or the lower electrode, in which the step of forming the plasma includes controlling the supply of the first RF based on a phase of the second RF.


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