The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2026

Filed:

Jun. 23, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Donghyeon Na, Hwaseong-si, KR;

Kyungsun Kim, Suwon-si, KR;

Soonam Park, Suwon-si, KR;

Seungbo Shim, Suwon-si, KR;

Janggyoo Yang, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32183 (2013.01); H01J 37/32642 (2013.01); H01J 37/32715 (2013.01); H01J 2237/2007 (2013.01); H01J 2237/334 (2013.01);
Abstract

A plasma processing apparatus includes: a plasma chamber including a first area and a second area; a first radio frequency (RF) power source transmitting pieces of first RF power to the first area; a second RF power source transmitting second RF power to the second area; a controller configured to control the first RF power source and the second RF power source; and a first coil and a second coil arranged in the second area, wherein the controller spatially controls plasma in the first and second areas by controlling a signal of a current applied to the first coil and a signal of a current applied to the second coil, and temporally controls the plasma in the first and second areas by controlling a signal of the first RF power transmitted from the first RF power source and a signal of the second RF power transmitted from the second RF power source.


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