The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
Nov. 06, 2023
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Kwang Ho Kim, Pleasanton, CA (US);
Erwin E. Yu, San Jose, CA (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 16/24 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/24 (2013.01);
Abstract
Entry of a memory device into a standby mode is determined. During the standby mode of the memory device, a first bias voltage level is caused to be applied to a sense amplifier latch of a sense amplifier of a page buffer circuit of the memory device. During the standby mode, a second bias voltage level is caused to be applied to a set of data latches of the sense amplifier of the page buffer circuit of the memory device, wherein the second bias voltage level is different from the first bias voltage level.