The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2026

Filed:

Feb. 13, 2023
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chia-Hong Lin, Hsinchu, TW;

Yu-Ting Lin, Hsinchu, TW;

Mill-Jer Wang, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/265 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2653 (2013.01);
Abstract

A method includes: providing a first semiconductor device including a backside interconnection structure, the first semiconductor device being formed by a semiconductor process; and generating a physical failure analysis model by an inspection process. The inspection process includes: directing an electron beam toward the frontside of the first semiconductor device; and applying an electrical signal to an electrical contact of the first semiconductor device through an electrical path that goes through a shunt board attached to a switchable interface trace bank, the electrical contact being associated with a position of the electron beam. The method further includes: generating a parameter of a revised semiconductor process according to the physical failure analysis model and the semiconductor process; and forming a second semiconductor device by the revised semiconductor process using the parameter.


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